Low Gate Charge Cool GaN Mosfet Power Transistor 125 W Pd - Power Dissipation

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Shenzhen Weitaixu Capacitor Co.,Ltd

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Low Gate Charge Cool GaN Mosfet Power Transistor 125 W Pd - Power Dissipation

Name: Low Gate Charge Cool GaN Mosfet Power Transistor 125 W Pd Power Dissipation
Brand: Original brand
Price: 1 USD

Quality Low Gate Charge Cool GaN Mosfet Power Transistor 125 W Pd - Power Dissipation for sale

Brand Name : Original brand

Model Number : IGOT60R070D1AUMA1

Certification : Original

Place of Origin : Original

MOQ : 800pcs

Price : Negotiation

Payment Terms : T/T

Supply Ability : 100000pcs

Delivery Time : 2-3days

Packaging Details : 800/Reel

Product : MOSFET 600V Cool GaN Power Transistor

Technology : GaN

Package : PG-DSO-20

Transistor Polarity : N-Channel

Installation : SMD/SMT

Pd-Power Dissipation : 125 W

Vds-Leakage source breakdown electric shock : 600 V

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Mosfet Power Transistor IGOT60R070D1AUMA1 MOSFET 600V CoolGaN Power Transistor

Features

• Enhancement mode transistor – Normally OFF switch

• Ultra fast switching

• No reverse-recovery charge

• Capable of reverse conduction

• Low gate charge, low output charge

• Superior commutation ruggedness

• Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22)

Benefits

• Improves system efficiency

• Improves power density

• Enables higher operating frequency

• System cost reduction savings

• Reduces EMI

Categories	MOSFET 600V CoolGaN Power Transistor
Categories	IGOT60R070D1AUMA1
Transistor Polarity	N-Channel
Working Temperature Range	-55C to +150C
Leakage Source on-resistance	70 mOhms
Package	PG-DSO-20
Pd-Power Dissipation	125 W
Vgs th-Gate Source threshold Voltage	600 V
Continous Leakage Current	31 A

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Low Gate Charge Cool GaN Mosfet Power Transistor 125 W Pd - Power Dissipation

Product Tags:

high power transistor

fast switching transistor

Low Gate Charge Cool GaN Mosfet Power Transistor 125 W Pd - Power Dissipation Images

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