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Through Hole Mosfet Power Transistor 1.1V Vgs Th - Gate Source Threshold Voltage

Shenzhen Weitaixu Capacitor Co.,Ltd
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Through Hole Mosfet Power Transistor 1.1V Vgs Th - Gate Source Threshold Voltage

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Brand Name : Original brand

Model Number : BSZ037N06LS5ATMA1

Certification : Original

Place of Origin : Original

MOQ : 5000pcs

Price : Negotiation

Payment Terms : T/T

Supply Ability : 100000pcs

Delivery Time : 2-3days

Packaging Details : 5000pcs

Continuous Leakage Current : 65 A

Installation : Through Hole

Package : TO-247-3

Transistor Polarity : N-Channel

Channel Pattern : Enhancement

Pd-Power Dissipation : 446 W

Vds-Leakage source breakdown electric shock : 650 V

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Mosfet Power Transistor NVHL040N65S3F M Superfet3 650V TO247 PKG N-Channel

Features

•OptimizedforhighperformanceSMPS,e.g.syncrec.

•100%avalanchetested •Superiorthermalresistance

•N-channel

•Pb-freeleadplating;RoHScompliant

•Halogen-freeaccordingtoIEC61249-2-21

Product validation

Fully qualified according to JEDEC for Industrial Application

Categories

Mosfet Power Transistor

BSZ037N06LS5ATMA1
Package TSDSON-8 FL
Serise OptiMOS
Leakage Source on-resistance 3.7 mOhms
Continuous Leakage Current 40A
Pd-Power Dissipation 69 W
Vgs th-Gate Source threshold Voltage 1.1V
Channel Pattern Enhancement



FAQ:

Q. What is your lead time?

A: Most of the products are in-stock so we can send out within 3 days after payment is confirmed. Some special products may need longer time, but please do not worry about that, we will let you know before your order.

Q. What is your warranty?

A: 1200 days after goods have been received. Our products will be 100% tested before they are sent out.

Q. What's the MOQ for your products?

A: We accept small orders from our customers, but it depends on different items so please contact with us.



Through Hole Mosfet Power Transistor 1.1V Vgs Th - Gate Source Threshold Voltage




Product Tags:

n channel power mosfet

      

fast switching transistor

      
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